USB2 Singulation method and resulting device of ...
A method for singulation of thick GaN wafers (, 300400 um) through the use of a doubleside laserscribe process. In a preferred embodiment, the patterned GaN substrate is processed using a laserscribe on each side of the substrate to form scribe lines. The scribe lines are aligned to each other. In a preferred embodiment, the substrate has not been subjected to a thinning or polishing ...